PART |
Description |
Maker |
CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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Cypress Semiconductor, Corp.
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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Turbo IC
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CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
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Cypress Semiconductor Corp.
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27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM 256K (32K x 8) CMOS EPROM 256K2K的8)的CMOS存储 DIODE SCHOTTKY 150V 60A TO247AC CAPACITOR 1500UF 80V ELECT TSHA CAP 270UF 400V ELECT TS-ED From old datasheet system 256K (32x8) CMOS EPROM
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YEONHO Electronics Co., Ltd. Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
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HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns 256K (32K x 8-bit) UV and OTP EPROM, 85ns 256K (32K X 8-BIT) UV AND OPT EPROM
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Hitachi Semiconductor
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LH52256C-10LL LH525CL9 |
256K SRAM CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM) 的CMOS 256K2K的8)静态RAM(的CMOS 256K2K的8)静态的RAM
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Sharp Electrionic Compo... Sharp Electrionic Components Sharp, Corp.
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CY62256VLL-70SNXI CY62256VLL-70SNXE CY62256VLL-70S |
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
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SRAM Cypress Semiconductor, Corp.
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CY7C0851V |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K x 36同步双端口RAM)
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Cypress Semiconductor Corp.
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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CY7C1399BN-12VC CY7C1399BNL-15VXC CY7C1399BNL-12ZX |
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
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Cypress Semiconductor Corp. SRAM Cypress Semiconductor, Corp.
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X28HC256D-12 X28HC256PZ-12 X28HC256PZ-15 X28HC256P |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 200 ns, PDSO28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, 90 ns, PDIP28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32 5V, Byte Alterable EEPROM
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Intersil, Corp. Intersil Corporation
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CY14B104K CY14B104K-ZS20XC CY14B104K-ZS20XCT CY14B |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 44-TSOP-II; Features: Real-Time Clock 4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
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CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp.
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